Close

1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZGivnJVY/M3iQr
Repositorysid.inpe.br/mtc-m16@80/2006/08.03.13.45   (restricted access)
Last Update2006:11.23.11.06.08 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m16@80/2006/08.03.13.45.06
Metadata Last Update2018:06.05.01.16.56 (UTC) administrator
Secondary KeyINPE-14334-PRE/9421
ISSN0103-9733
Citation KeyBarrosAbraRapp:2006:ElOpCh
TitleLead telluride p-n junctions for infrared detection: Electrical and optical characteristics
Year2006
MonthJune
Access Date2024, May 18
Secondary TypePRE PN
Number of Files1
Size145 KiB
2. Context
Author1 Barros, André Santiago
2 Abramof, Eduardo
3 Rappl, Paulo Henrique de Oliveira
Resume Identifier1
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JJ37
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
JournalBrazilian Journal of Physics
Volume36
Number2A
Pages474-477
History (UTC)2006-08-03 13:45:06 :: simone -> administrator ::
2006-09-28 22:33:38 :: administrator -> simone ::
2006-11-23 11:06:08 :: simone -> administrator ::
2009-08-12 01:02:30 :: administrator -> simone ::
2011-05-24 14:08:45 :: simone -> administrator ::
2012-10-22 20:58:33 :: administrator -> simone :: 2006
2012-10-30 18:46:35 :: simone -> administrator :: 2006
2018-06-05 01:16:56 :: administrator -> marciana :: 2006
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
Keywordsinfrared detection
electrical and optical characteristics
PbTe mesa diodes
SILICON
ARRAYS
AbstractPbTe mesa diodes were fabricated from a series of p-n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 10(17) cm(-3) and the electron concentration varied between and 10(19) cm(-3). Capacitance versus voltage analysis revealed that for n > 10(18) cm(-3), a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R(0)A product varied between 0.23 and 31.8 Omega cm(2), and the integral detectivity ranged from 1.1 x 10(8) to 6.5 x 10(10) cmHz(1/2)W(-1). The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Lead telluride p-n...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target FileLead telluride p n junctions.pdf
User Groupadministrator
simone
Reader Groupadministrator
simone
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.57.50 2
sid.inpe.br/bibdigital/2013/09.24.19.30 1
sid.inpe.br/mtc-m21/2012/07.13.14.44.57 1
DisseminationWEBSCI; PORTALCAPES; SCIELO.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url
7. Description control
e-Mail (login)marciana
update 


Close